MOHANTY, Soumya S. Influence of spacer on symmetrical stepped InGaAs/InP DGMOSFET for enhancement of the device performance. International Journal of Psychosocial Rehabilitation, [S. l.], v. 24, n. 6, p. 3900–3906, 2020. DOI: 10.61841/peaffs65. Disponível em: https://psychosocial.com/index.php/ijpr/article/view/6854. Acesso em: 7 jul. 2025.