Study of the Influence of Ultrasonic Waves on Electro-physical Characteristics of Radiation Receivers
DOI:
https://doi.org/10.61841/f6qsm008Keywords:
Si Radiation Detectors, Large-scale and Small-scale Local Clusters of Impurity Atoms, Ultrasound, Height of the Potential Barrier of the PN JunctionAbstract
The physical processes of capture and ejection of charge carriers in Si-n-p radiation detectors, affecting their electro-physical characteristics (current-voltage), are investigated. It was shown that after ultrasonic treatment of Si detectors, the height of the potential barrier of p-n junctions formed by the presence of local clusters of impurity atoms decreased.
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